A Si2Sb2Te5 phase change memory featuring 27F2 cell size and ultra low writing current

Author

Yifeng, Chen ; Song Zhitang ; Xiaogang, Chen ; Liu Bo

Author_Institution

State Key Lab. of Functional Mater. for Inf., Lab. of Nanotechnol., Chinese Acad. of Sci., Shanghai, China

fYear

2011

fDate

15-17 April 2011

Firstpage

99

Lastpage

101

Abstract

A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si₂Sb₂Te₅ (SST) storage material into 0.13um standard CMOS technology and resulted from the high electrical resistances of the novel chalcogenide both in amorphous and crystalline state, which contribute greatly to the improved efficiency of heating process during both RESET and SET operation.

Keywords

CMOS integrated circuits; antimony compounds; phase change memories; silicon compounds; RESET writing currents; Si₂Sb₂Te₅; amorphous state; bottom electrode contact; crystalline state; current 0.3 mA; current 0.5 mA; heating process; high electrical resistances; phase change memory; size 0.13 mum; size 90 nm; standard CMOS technology; standard technology; ultra low SET; ultra low writing current; Electrodes; Phase change materials; Phase change memory; Programming; Resistance; Writing; PCM; Si2Sb2Te5; writing current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5778125

Filename

5778125