DocumentCode
3290052
Title
Analysis and design of a FET-PIN-FET attenuator
Author
Moradi, G. ; Abdipour, A. ; Shabani, A.
Author_Institution
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran
fYear
2008
fDate
2-4 Dec. 2008
Firstpage
475
Lastpage
477
Abstract
This paper describes the implementation of a hybrid attenuator which is made by combination of field effect transistors and PIN diodes. The performance of this structure can be better than the characteristics of classical PIN attenuators and those of FET attenuators. The developed circuit can be used as a key element in AGCs.
Keywords
attenuators; automatic gain control; microwave diodes; microwave field effect transistors; p-i-n diodes; AGC; PIN diodes; field effect transistors; hybrid FET-PIN-FET attenuator; microwave systems; Attenuation; Attenuators; Circuit simulation; Conference proceedings; Linearity; Microwave FETs; Optical amplifiers; Radio frequency; Resistors; Solid state circuits; FET attenuators; Microwave attenuators; PIN diode;
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-2866-3
Electronic_ISBN
978-1-4244-2867-0
Type
conf
DOI
10.1109/RFM.2008.4897419
Filename
4897419
Link To Document