Via hole modeling of PZT thin films for MMIC applications

Author

Bakar, Rohani Abu ; Awang, Zaiki ; Sulaiman, Suhana ; Lazim, Nor Fazlina Mohd ; Khan, Zuhani Ismail

Author_Institution

Microwave Technol. Centre, Univ. Teknol. MARA, Shah Alam

fYear

2008

fDate

2-4 Dec. 2008

Firstpage

222

Lastpage

225

Abstract

This paper reports on the performance and effects of via holes fabricated in lead zirconate titanate (PZT) thin films intended for microwave integrated circuit applications. Square and cylindrical vias were simulated at microwave frequencies using a 3D electromagnetic simulator. The performance of via hole grounding was then compared to the edge grounding at the PZT/Pt interface. An equivalent circuit model is proposed and the models parameters are extracted. The simulation results showed that using via hole resulted in low inductance (3.848 nH) and resistance (0.017 Omega) values compared to edge grounding technique (L = 10.192 nH and R = 0.074 Omega).

Keywords

MMIC; ferroelectric materials; lead compounds; oxygen compounds; platinum; thin films; zirconium compounds; 3D electromagnetic simulator; MMIC applications; PZT-Pt; edge grounding; ferroelectric material; microwave integrated circuit applications; resistance 0.017 ohm; resistance 0.074 ohm; thin films; Application specific integrated circuits; Circuit simulation; Equivalent circuits; Grounding; MMICs; Microwave frequencies; Microwave integrated circuits; Thin film circuits; Titanium compounds; Transistors; PZT thin films; microwave integrated circuits; via hole;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference, 2008. RFM 2008. IEEE International

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-2866-3

Electronic_ISBN

978-1-4244-2867-0

Type

conf

DOI

10.1109/RFM.2008.4897442

Filename

4897442