Characterization of submicrometer thickness of copper film on silicon wafer by using pulsed eddy current method

Author

Qu, Zilian ; Zhao, Qian ; Meng, Yonggang

Author_Institution

State Key Lab. of Tribology, Tsinghua Univ., Beijing, China

fYear

2011

fDate

15-17 April 2011

Firstpage

1220

Lastpage

1223

Abstract

Pulsed eddy current (PEC) method for thickness measurement of metal film has been widely investigated in recent years. In the previous researches, this method has been mainly used in metal thickness measurement in the range from millimeter to centimeter and nondestructive inspection. The effectiveness of the PEC method for measurement of submicrometer thick copper (Cu) film has not been reported. In this experimental study, a prototype transducer based on the PEC principle has been developed for detecting the thickness copper films sputtered on silicon wafer. It has been found that PEC method can be applied to the thickness measurement of copper film down to submicrometer scale.

Keywords

chemical mechanical polishing; copper; eddy currents; nondestructive testing; planarisation; silicon; thickness measurement; Cu; Si; copper film; metal film; nondestructive inspection; prototype transducer; pulsed eddy current method; silicon wafer; submicrometer thickness; thickness measurement; Coils; Copper; Eddy currents; Films; Inductance; Silicon; Thickness measurement; CMP; Cu film; lift-off; pulsed eddy current (PEC);

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5778190

Filename

5778190