A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior

Author

Sleight, J.W. ; Rios, R.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

143

Lastpage

146

Abstract

A fully continuous compact SOI model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, the model described here accounts for the possible transitions between FD and PD behavior during the device operation.

Keywords

MOSFET; circuit analysis computing; semiconductor device models; silicon-on-insulator; SOI; Si; automatic transitions; body depletion condition; circuit simulations; continuous compact MOSFET model; fully depleted device behavior; partially depleted device behavior; Body regions; Dielectric substrates; Doping; Electrostatics; Isolation technology; MOSFET circuits; Permittivity; Poisson equations; Semiconductor films; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553141

Filename

553141

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3291298