Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

Author

Stoliar, P. ; Levy, P. ; Sanchez, Maria Jesus ; Leyva, A.G. ; Albornoz, C.A. ; Gomez-Marlasca, F. ; Zanini, Anibal ; Toro Salazar, C. ; Ghenzi, N. ; Rozenberg, M.J.

Author_Institution

Escuela de Cienc. y Tecnol., Univ. Nac. de San Martin, San Martin, Argentina

Volume

61

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

21

Lastpage

25

Abstract

We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs.

Keywords

circuit stability; random-access storage; RS based MLC; ReRAM; manganite based RS device; multilevel cell; nonvolatile memory cell; resistive random access memory; resistive switching; transition metal oxide-based circuit; Histograms; Metals; Nonvolatile memory; Resistance; Stability analysis; Switches; Tuning; Multilevel cell (MLC); nonvolatile memory; resistive random access memory (ReRAM); resistive switching (RS);

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2013.2290921

Filename

6689338