Multifinger effect in a GaAs FET distributed large signal CAD model

Author

Avitabile, G. ; Cidronali, A. ; Vannini, G. ; Manes, G.

Author_Institution

Dept. of Electr. Eng., Florence Univ., Italy

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

159

Lastpage

162

Abstract

The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non-linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD tool and it has been tested by comparison with large signal measurements.

Keywords

CAD; III-V semiconductors; Schottky gate field effect transistors; electromagnetic field theory; electronic engineering computing; equivalent circuits; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; GEC-Marconi F20 process; GaAs; GaAs FET; commercial CAD tool; device electrical performance; distributed large signal CAD model; electromagnetic field theory; gate widths; geometrical parameters; material parameters; microwave FETs; millimetre-wave FETs; multifinger effect; nonlinear model; process parameters; scalable model; semiconductor physics; Electromagnetic field theory; Electromagnetic modeling; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Microwave theory and techniques; Physics; Semiconductor materials; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553145

Filename

553145