High performance Schottky barrier MOSFETs on UTB SOI

Author

Urban, C. ; Sandow, C. ; Zhao, Q.T. ; Mantl, S.

Author_Institution

Inst. of Bio- & Nanosystems, Forschungszentrum Julich, Julich

fYear

2009

fDate

18-20 March 2009

Firstpage

65

Lastpage

68

Abstract

This paper presents fully-depleted short-channel Schottky barrier (SB) MOSFETs with silicidation induced dopant segregation of B at a low temperature of 450degC. The integration of nickel silicide combined with either As or B segregation significantly improves the switching performance of dopant-free SB-MOSFETs. The implantation dose dependence of the device characteristics is studied on long channel p- and n-type SB-MOSFETs. An enhanced device performance with higher oncurrents and a strong suppression of the ambipolar behaviour, which is typical for SB-MOSFETs, is observed with increasing implantation dose. Short channel p-type SB-MOSFETs with a channel length of 80 nm show an on-current of 525 muA/mum at an I_on/I_off-ratio of 10⁴, becoming competitive with state-of-the-art SB-MOSFETs.

Keywords

MOSFET; Schottky barriers; nickel compounds; semiconductor doping; silicon-on-insulator; NiSi; Schottky barrier MOSFET; Si-SiO₂; UTB SOI; ambipolar behaviour; dopant segregation; implantation dose dependence; nickel silicide integration; silicidation; size 80 nm; switching performance; temperature 450 C; Charge carrier processes; Etching; Fabrication; MOSFETs; Plasma applications; Plasma temperature; Schottky barriers; Silicidation; Silicides; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897540

Filename

4897540