Modeling of piezoresistive coefficients in Si hole inversion layers

Author

Pham, A.T. ; Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Tech. Univ. Braunschweig, Braunschweig

fYear

2009

fDate

18-20 March 2009

Firstpage

121

Lastpage

124

Abstract

A mobility model for hole inversion layers based on the self-consistent solution of the 6 times 6 koarr ldr poarr Schrodinger equation (SE) and Poisson equation (PE) has been developed. The mobility variation due to uniaxial stress and biaxial strain is simulated and the simulation results reproduce available measurements. The piezoresistive coefficient extraction technique based on the mobility variation due to uniaxial stress is generalized for general diamond crystal lattice material. The new derivation is applicable for arbitrary surface and channel orientations.

Keywords

Poisson equation; Schrodinger equation; crystal structure; diamond; hole mobility; piezoresistive devices; Poisson equation; Schrodinger equation; biaxial strain; channel orientations; diamond crystal lattice material; mobility model; piezoresistive coefficients; self-consistent solution; silicon hole inversion layers; surface orientations; uniaxial stress; CMOS technology; Capacitive sensors; Crystallography; Lattices; Optical scattering; Piezoresistance; Poisson equations; Strain measurement; Stress measurement; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897553

Filename

4897553