• DocumentCode
    3292466
  • Title

    Multilevel flash cells and their trade-offs

  • Author

    Eitan, B. ; Kazerounian, R. ; Roy, A. ; Crisenza, G. ; Cappelletti, P. ; Modelli, A.

  • Author_Institution
    WSI Inc., Fremont, CA, USA
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    In this paper we compare six different multilevel flash cells, viz., common ground, DINOR, AND, AMG, split gate and NAND. The key conclusions are that the hot electron effect lends itself better than tunneling as the multilevel programming mechanism. The common ground cell is the most suitable for multilevel flash cells. The NAND architecture is the least favorable.
  • Keywords
    EPROM; NAND circuits; hot carriers; integrated memory circuits; tunnelling; AMG cell; AND architecture; DINOR cell; NAND architecture; common ground cell; hot electron effect; multilevel flash cells; multilevel programming mechanism; split gate cell; tunneling; Channel hot electron injection; Circuits; Complexity theory; Costs; Low voltage; Maintenance; Parallel programming; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.553147
  • Filename
    553147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3292466