The disposable dot FET: A strained silicon channel on top of removed SiGe

This paper presents a silicon MOSFET device, which utilizes locally strained silicon layers for high mobility channels. By means of template-assisted self assembly of Ge-islands and silicon overgrowth a silicon layer is formed, which is strained on top of the very accurately placed Ge-islands and their near vicinity. The island formation in the seed holes on pre patterned substrates and the intrinsic overlay of the e-beam lithography were investigated. The island size, shape and distribution can be properly controlled up to a grid pitch of 700 nm. The intrinsic overlay of plusmn10 nm can be maintained during device processing, which is due to the symmetry of the markers.