DocumentCode
3293055
Title
Modeling of radiation-induced displacement damage in silicon solar cells: Frenkel defect
Author
Maiti, T.K. ; Maiti, C.K.
Author_Institution
Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India
fYear
2009
fDate
6-10 July 2009
Firstpage
647
Lastpage
649
Abstract
Displacement damage mechanisms due to radiation have been investigated and interpreted via abinitio calculation. Effect of radiation-induced Frenkel defect has been incorporated in device modeling. Current voltage characteristics are studied to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).
Keywords
Frenkel defects; solar cells; Frenkel defect; ab initio calculation; beginning of life parameters; current voltage characteristics; device modeling; radiation-induced displacement damage; silicon solar cells; Atomic measurements; Current-voltage characteristics; Degradation; Entropy; Lattices; Neural networks; Particle scattering; Photovoltaic cells; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232562
Filename
5232562
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