Stable, low power and high performance SRAM based on CNFET

Author

Moradinasab, Mahdi ; Fathipour, Morteza

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

fYear

2009

fDate

18-20 March 2009

Firstpage

317

Lastpage

320

Abstract

In this paper we investigate the electrical characteristics of carbon nanotube field effect transistor (CNFET) SRAMs. This analysis shows that in 32 nm technology node CNFET SRAM spends much less standby power and is more stable in read operation as compared with its Si-MOSFET SRAM counterpart. However, write static noise margin (SNM) in CNFET SRAM is very low so two SRAM designs based on backgate voltage and diameters of CNFET have been proposed to improve write SNM in CNFET SRAMs. This investigation shows that access time for a 128 column-256 row SRAM array based on CNFET is improved over its Si-Ccounterpart.

Keywords

MOSFET circuits; SRAM chips; carbon nanotubes; circuit stability; elemental semiconductors; field effect memory circuits; field effect transistor circuits; MOSFET; SRAM; Si; carbon nanotube field effect transistor; size 32 nm; static RAM; write static noise margin; CMOS technology; CNTFETs; Capacitance; Carbon nanotubes; Electric variables; Low voltage; MOSFETs; Microprocessors; Random access memory; Threshold voltage; CNFET; SRAM; backgate voltage; high performance; low power; nano electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897599

Filename

4897599