High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

Author

Lim, S. ; Kim, S.J. ; Jung, J.H. ; Ju, B.-K. ; Oh, M.H. ; Wager, J.F.

Author_Institution

Dept. of Electron. Eng., Dankook Univ., Choongnam, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

406

Lastpage

410

Abstract

Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller

Keywords

dielectric thin films; electric strength; helium; optical films; plasma CVD; plasma CVD coatings; refractive index; silicon compounds; Corning-7059 glass substrate; He; He PECVD; Si; Si wafers; SiN-Si; SiON; SiON films; anti-reflection coatings; chemical vapor deposition; computer process controller; dielectric strength; field emitter devices; gas flow rate control; high quality SiN thin films; low deposition temperature; plasma-enhanced CVD; Chemical vapor deposition; Dielectric breakdown; Dielectric thin films; Helium; Optical films; Plasma chemistry; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601852

Filename

601852