DocumentCode
3293572
Title
Advanced CD Control Technology for 65-nm Node Dual Damascene Process
Author
Nagase, M. ; Maruyama, T. ; Iguchi, M. ; Suzuki, M. ; Tominaga, M. ; Sekine, M.
Author_Institution
NEC Electron. Corp., Sagamihara
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
141
Lastpage
144
Abstract
This paper describes an advanced CD control technology for 65-nm node dual damascene process and beyond. Our newly developed DESE (deposition enhanced shrink etching) technology realizes not only dynamic via shrink ranged 40nm but also accurate trench CD control by feed-forward technology. This technology has been performed for 65-nm Cu/Low-k interconnects using porous CVD SiOC.
Keywords
chemical vapour deposition; etching; integrated circuit interconnections; low-k dielectric thin films; porous materials; CD control technology; Cu/Low-k interconnects; deposition enhanced shrink etching technology; dual damascene process; feedforward technology; porous CVD; Costs; Dynamic range; Etching; Feedforward systems; Lithography; National electric code; Plasma applications; Plasma measurements; Process control; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493044
Filename
4493044
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