Crystal defects analysis using nano-probe technologies

Author

Qin, Tim ; Zhang, Ming ; Gong, Excimer ; Guo, Qiang ; Qiang Guo ; Chien, Wei-Ting Kary

Author_Institution

Anal. Lab., Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China

fYear

2009

fDate

6-10 July 2009

Firstpage

286

Lastpage

289

Abstract

With the device size shrinking to deep sub-micron region, silicon crystal defects become critical to device parameters. It also brings FA (Failure Analysis) great challenges on timely and exactly identifying the defect by EFA (Electrical Failure Analysis) and PFA (Physical Failure Analysis) methods. In this paper, we report the FA´s on the single bit failure of a 6T-SRAM using nano-probe technologies for electrical localization. PFA methods, such as SEM (Scanning Electron Microscope), TEM (Transmission Electron Microscope), and chemical etching were performed for failure visualization.

Keywords

SRAM chips; crystal defects; etching; failure analysis; scanning electron microscopy; transmission electron microscopy; 6T-SRAM; chemical etching; cystal defects analysis; deep sub-micron region; device parameters; electrical failure analysis; failure visualization; nano-probe technologies; physical failure analysis; scanning electron microscope; silicon crystal defects; single bit failure; transmission electron microscope; Contacts; Etching; Failure analysis; Optical microscopy; Probes; Random access memory; Scanning electron microscopy; Testing; Transmission electron microscopy; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232649

Filename

5232649