Bond pad structure reliability

Author

Ching, Teo Boon ; Schroen, Walter H.

fYear

1988

fDate

12-14 Apr 1988

Firstpage

64

Lastpage

70

Abstract

Bond pads typically have oxides below the metallization which act to insulate the pads from the substrate. These oxides are grown or deposited as part of the primary front-end process of the device. Different oxides are seen to have varying tolerance to the associated mechanical loading and ultrasonic scrubbing, resulting in bond pad cracking. The front-end process can thus influence bond quality. A study was done to characterize various oxides and also different metal systems consisting of aluminum and titanium tungsten alloy. The proper choice of metallization was found to give significant improvement in tolerance of bond-process-induced stresses

Keywords

integrated circuit technology; lead bonding; metallisation; packaging; reliability; Al; TiW; bond pad structure reliability; bond-process-induced stresses; cracking; mechanical loading; metallization; oxides; ultrasonic scrubbing; Aluminum; Aluminum alloys; Atherosclerosis; Bonding; Bonding forces; Instruments; Insulation; Metallization; Silicon; Stress; Temperature; Testing; Thermal stresses; Titanium alloys; Tungsten; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23428

Filename

23428