Electrical and Optical Characteristics of ZnO:Er Films on Silicon Substrates

Author

Malyutina-Bronskaya, Victoria V. ; Zalesski, Valerii B. ; Leonova, Tamara R. ; Mudryi, Alexander V.

Author_Institution

NAS Belarus, Minsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

64

Lastpage

66

Abstract

Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.

Keywords

II-VI semiconductors; annealing; erbium; photoluminescence; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds; ZnO:Er; annealing; capacity-voltage characteristics; current-voltage characteristics; reactive ion-plasma sputtering; room temperature photoluminescence; temperature 293 K to 298 K; Annealing; Luminescence; Optical films; Photoluminescence; Scanning electron microscopy; Semiconductor films; Silicon; Sputtering; Temperature dependence; Zinc oxide; Electrical properties; Optical properties; Reactive magnetron sputtering; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292909

Filename

4292909