Advanced block oxide MOSFETs for 25 nm technology node

Author

Sun, Chih-Hung ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chang, Tzu-Feng ; Lin, Po-Hiesh ; Chen, Hsuan-Hsu ; Kuo, Chih-Hao ; Chiu, Hsien-Nan

Author_Institution

Dept. of EE, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2009

fDate

6-10 July 2009

Firstpage

174

Lastpage

177

Abstract

This paper proposes two ultimate block oxide (BO) devices called MOS with BO (bMOS) and middle partial insulation with BO (bMPI), respectively. Both he fabrications of the two devices are simple and self-alignment, which help to attain low-cost mass production. The bMOS shows better thermal stability than the bMPI because of its multiple-tie scheme. Also the most conspicuous one is the lattice temperature; bMOS shows about 40% lower temperature compared with the bMPI. However, the bMPI can gain better short-channel behavior due to the BOX under its channel layer. In addition, although the drain on-state current of the bMPI is lower than that of the bMOS, the lower leakage current helps to gain a higher ION/IOFF ratio. It is a trade-off between performance and reliability. Additionally, if the fabrication cost is also considered, the bMOS will exhibit better advantage than the bMPI because of a bulk wafer being used for a starting substrate.

Keywords

MOSFET; leakage currents; thermal stability; advanced block oxide MOSFET; bMOS devices; drain on-state current; leakage current; low-cost mass production; multiple-tie scheme; partial insulation; size 25 nm; thermal stability; Etching; Fabrication; Insulation; Leakage current; MOSFETs; Mass production; Silicon; Sun; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232673

Filename

5232673