DocumentCode
3295318
Title
Hot electron stress effect on dual-band power amplifier and integrated mixer-lna design for reliability
Author
Yuan, J.S. ; Ma, J. ; Hsu, C.-W. ; Yeh, W.K.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
2009
fDate
6-10 July 2009
Firstpage
178
Lastpage
181
Abstract
Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in SpectreRF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier.
Keywords
MOSFET; circuit reliability; low noise amplifiers; power amplifiers; MOSFET; SpectreRF simulation; channel hot-electron degradations; dual-band power amplifier; hot electron stress effect; integrated mixer-LNA design; integrated mixer-low noise amplifier; Degradation; Dual band; Electron mobility; Integrated circuit reliability; MOSFETs; Noise figure; Power amplifiers; Silicon compounds; Tensile stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232674
Filename
5232674
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