Comparison of breakdown mechanism of HfO2 and HfSiOx high-k gate dielectrics with N2 RTA treatment on TDDB constant voltage stress

Author

Lin, Cheng-Li ; Chou, Mei-Yuan ; Hong, Jia-Jun ; Kang, Tsung-Kuei ; Wu, Shich-Chuan ; Juan, Pi-Chun

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2009

fDate

6-10 July 2009

Firstpage

163

Lastpage

168

Abstract

In this work, we study the effects of rapid thermal annealing (RTA) on HfO₂ and HfSiO_x gate dielectrics. The film electrical characteristics, TDDB reliability, breakdown characteristics and mechanism, and the optimum temperature of N₂ RTA treatment were investigated. We also propose a model to explain breakdown mechanism and the difference between HfO₂ and HfSiO_x dielectrics. For lifetime projection of TDDB reliability, the HfSiO_x dielectric possesses less breakdown detection issue and superior time to breakdown than those of HfO₂ dielectric.

Keywords

dielectric materials; electric breakdown; films; hafnium compounds; rapid thermal annealing; silicon compounds; HfO₂; HfSiO_x; RTA treatment; TDDB constant voltage stress; TDDB reliability; breakdown characteristics; constant voltage stress; film electrical characteristics; gate dielectric; rapid thermal annealing; time dependent dielectric breakdown testing; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric measurements; Electric breakdown; Electric variables; Hafnium oxide; High-K gate dielectrics; Leakage current; Rapid thermal annealing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232675

Filename

5232675