Reliability and charge trapping properties of ZrO2 gate dielectric on Si passivated p-GaAs

Reliability characteristics of ZrO₂ gate dielectric films on p-GaAs with ultrathin silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO₂ dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been performed using C-V, I-V, CVS and CCS to understand the reliability and the interface trapping behaviour of TaN/ZrO₂/Si/p-GaAs gate stack. Low positive charge trapping after N2 annealing was observed for different constant voltage and current stressing conditions.