DocumentCode
3295637
Title
Modeling of Ionic Conductivity Dielectric with Non-uniform Blocking Surface
Author
Perov, Gennady V. ; Shauerman, Alexander A.
Author_Institution
Siberian State Univ. of Telecommun. & Inf., Novosibirsk
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
131
Lastpage
132
Abstract
The one-dimensional model of ionic conductivity in dielectric layers with a non-uniform blocking surface of the semiconductor with specified geometrical horizontal structure is developed. The model is based on the results of research of a relaxation of ions in dielectric on polycrystalline silicon and allows predicting behavior of ions depending on a roughness of border.
Keywords
dielectric thin films; ionic conductivity; silicon; Si; border roughness; dielectrics; ionic conductivity; nonuniform blocking surface; polycrystals; Conductive films; Conductivity; Dielectrics; Helium; Polarization; Predictive models; Rough surfaces; Silicon; Solid modeling; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292935
Filename
4292935
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