Fabrication of 12/spl times/12 matrix-addressed 780 nm oxide-confined VCSEL arrays

Author

Nakayama, H. ; Nakmaura, T. ; Sakurai, J. ; Ueki, N. ; Otoma, H. ; Miyamoto, Y. ; Yamamoto, M. ; Ishii, R. ; Yoshikawa, M. ; Fuse, M.

Author_Institution

Fuji Xerox Co. Ltd., Kanagawa, Japan

fYear

1998

fDate

20-24 July 1998

Abstract

Summary form only given. We describe the fabrication process of 12x12 matrix-addressed oxide-confined VCSEL arrays and their characteristics. Complete planarization enabled p(top) and n(bottom) electrodes to be successfully formed across DBR layers whose total thickness is 10 /spl mu/m. As a result, high yield and good uniformity in device performance was achieved. Each VCSEL consists of n and p- semiconductor DBR and MQW active region, which are all AlGaAs 22 /spl mu/m diameter post structure.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser transitions; optical fabrication; quantum well lasers; semiconductor laser arrays; semiconductor technology; surface emitting lasers; 10 mum; 12/spl times/12 matrix-addressed 780 nm oxide-confined VCSEL array fabrication; 22 mum; AlGaAs; DBR MQW active region; DBR layers; device performance; electrodes; fabrication process; good uniformity; high yield; matrix-addressed oxide-confined VCSEL arrays; planarization; post structure; Apertures; Distributed Bragg reflectors; Electrodes; Etching; Gallium arsenide; Large scale integration; Optical device fabrication; Planarization; Polyimides; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband Optical Networks and Technologies: An Emerging Reality/Optical MEMS/Smart Pixels/Organic Optics and Optoelectronics. 1998 IEEE/LEOS Summer Topical Meetings

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-4953-9

Type

conf

DOI

10.1109/LEOSST.1998.690264

Filename

690264