DocumentCode
3296141
Title
Alpha-particle-induced soft-error mechanism in semi-insulating GaAs substrate
Author
Umemoto, Y. ; Matsunaga, N. ; Mitsusada, K.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1988
fDate
12-14 Apr 1988
Firstpage
102
Lastpage
108
Abstract
The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model
Keywords
III-V semiconductors; alpha-particle effects; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated circuit testing; GaAs; GaAs substrate; ICs; alpha-particle-induced soft error; bipolar mechanism; charge-collection model; model; n-i-n isolation structure; total collected charge; Capacitors; Computer errors; Electrons; Gallium arsenide; History; Laboratories; MESFETs; Predictive models; Silicon; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/RELPHY.1988.23435
Filename
23435
Link To Document