• DocumentCode
    3296520
  • Title

    Patterning and electrical testing of field emission arrays with novel emitter geometries

  • Author

    Karpov, L.D. ; Genelev, A.P. ; Mirgorodski, Y.V. ; Tikhonsk, A.N.

  • Author_Institution
    SI Diamond Technol. Inc., Austin, TX, USA
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    542
  • Lastpage
    546
  • Abstract
    Fabrication technology for Cu microtips with high aspect ratio, where microtip height is ~6.5-7.5 μm and microtip density in the active area is ~2.88×106 tips/cm2, via lift-off method is experimentally confirmed. We investigated the possibility of increasing emission uniformity though the introduction of a-Si multi-resistors into the microtips. We establish that reduction of fluctuation currents can be achieved with 300-350 A thick SiC coating over the microtips. We looked into emission properties of Cu microtips with dome-shaped Ti apex
  • Keywords
    copper; current fluctuations; electron device testing; electron field emission; testing; vacuum microelectronics; 300 to 350 A; 6.5 to 7.5 micron; Cu microtips; Si; SiC coating; SiC-Cu; Ti-Cu; a-Si multi-resistors; dome-shaped Ti apex; electrical testing; emission uniformity; emitter geometries; fabrication technology; field emission arrays; fluctuation currents reduction; high aspect ratio; lift-off method; patterning; Anodes; Cathodes; Chromium; Fabrication; Field emitter arrays; Geometry; Phosphors; Shape; Silicon carbide; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601883
  • Filename
    601883