Properties of Composite Films Obtained by Ion-Plasma Atomizing

Author

Danilina, T.I. ; Sakharov, J.V.

Author_Institution

Tomsk State Univ., Tomsk

fYear

2005

fDate

21-27 March 2005

Firstpage

135

Lastpage

137

Abstract

In this work thin films of titanium silicide and molybdenum as materials for contacts on different substrates and for Schottky barriers in gallium arsenide have been investigated. Material of constant should be of low specific resistance and high thermostability at all following technological operations. Suitability of silicide films for devices with Schottky barrier has been evaluated by values of inverse voltage and coefficient of identity. Composition of the obtained films has been studied by the method of Reserford back scattering (RBS) and by the method of Auger spectroscopy.

Keywords

Auger electron spectra; III-V semiconductors; Schottky barriers; electrical resistivity; gallium arsenide; molybdenum; plasma arc spraying; semiconductor-metal boundaries; silicon alloys; titanium alloys; Auger spectroscopy; GaAs; Mo-GaAs; Reserford back scattering; Schottky barriers; TiSi₂-GaAs; composite films; gallium arsenide; ion-plasma atomization; molybdenum; specific resistance; thermostability; titanium silicide; Annealing; Conducting materials; Electric shock; Nanostructured materials; Powders; Region 8; Silicides; Silicon; Substrates; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Technique and Technologies, 2005. MTT 2005. 11th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists

Conference_Location

Tomsk

Print_ISBN

978-0-7803-8877-2

Electronic_ISBN

978-0-7803-8878-9

Type

conf

DOI

10.1109/SPCMTT.2005.4493225

Filename

4493225