DocumentCode
3296801
Title
Microelectronic field-emission crossed-field amplifier with two delay lines
Author
Sokolov, D.V. ; Trubetskov, D.I.
Author_Institution
Res. Inst. for Mech. & Phys., N.G. Chernyshevski Saratov State Univ., Russia
fYear
1996
fDate
7-12 Jul 1996
Firstpage
601
Lastpage
605
Abstract
We present the results of a theoretical study of the microelectronic modification of a crossed-field amplifier with two delay lines. This device permits one to receive high gain for the typical parameters of field-emission cathodes and delay lines
Keywords
delay lines; distributed amplifiers; electron field emission; millimetre wave amplifiers; millimetre wave tubes; vacuum microelectronics; 50 to 200 GHz; delay lines; distributed FEA; field-emission cathodes; field-emission crossed-field amplifier; microelectronic modification; Acceleration; Cathodes; Delay lines; Distributed amplifiers; Electromagnetic scattering; Electron emission; Microelectronics; Physics; Propagation delay; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601895
Filename
601895
Link To Document