• DocumentCode
    3296961
  • Title

    Doped nanocrystalline phosphors for low voltage displays

  • Author

    Goldburt, E.T. ; Bhargava, R.N.

  • Author_Institution
    Nanocrystals Technol., NY, USA
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    637
  • Abstract
    Recent discovery of efficient doped nanocrystalline (DNC) luminescent materials in the size range of 30 - 50 E can yield low voltage phosphors for Field Emission displays (FED). The surface related nonradiative contribution in the nanocrystalline phosphors can be reduced by the incorporation of the activator. In this work we report the variation of luminescent efficiency with size of doped nanocrystalline Y2O3:Tb phosphor. A correlation between the optical and microstructural properties of the samples was established. The microstructural properties of the doped nanocrystals were studied using transmission electron microscopy (TEM). The sizes as determined from electron microscopy, were correlated with the luminescent efficiencies of the doped nanocrystalline phosphors. We observe that the decrease in the particle size of the doped nanocrystalline phosphor results in the increase of the photoluminescent efficiency. This result indicates that the surfaces do not play a dominant role in the efficiency in the doped nanocrystalline phosphors and should allow us to produce better low voltage displays
  • Keywords
    flat panel displays; phosphors; photoluminescence; terbium; vacuum microelectronics; yttrium compounds; Y2O3:Tb; field emission displays; low voltage displays; luminescent efficiency; luminescent materials; microstructural properties; nanocrystalline phosphors; particle size; photoluminescent efficiency; surface related nonradiative contribution; transmission electron microscopy; Costs; Flat panel displays; Low voltage; Nanocrystals; Nanostructured materials; Phosphors; Temperature; Transmission electron microscopy; Ultrafast optics; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601903
  • Filename
    601903