Electron Emission from Gated Pt emitters Fabricated by Electron Beam Induced Deposition

Summary form only given, as follows. Pt emitter tips with a gold gate structure have been fabricated by electron bean induced deposition. Gold gate structures with silicon oxide insulating layer on a Si substrate have been fabricated by conventional dry processing. Conventional Si tips were overetched, and hence no electron emission was observed from the structure. Focused electron beams at 30 keV with a spot size of 5 nm were scanned at the center of the gate opening in methylcyclopentadienyl trimethyl platinum atmosphere at a flow rate of 10/sup 19/-10/sup 20/ molecules/cm/sup 2/ for 30 s. 10/spl times/10 FEAs with e-beam deposited Pt tips showed field emission similar to that of FEAs with conventionally fabricated Si tips.