• DocumentCode
    3299706
  • Title

    Physical analysis of current snap-back phenomenon in buffered high power rectifiers

  • Author

    Trivedi, Malay ; Shenai, Krishna

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    This paper provides a physical explanation of the snap-back observed in the forward I-V characteristics of high power rectifiers having a buffer layer at the rectifying junction, as found in punch-through IGBTs. Current density at which the snap-back occurs and the extent of the fall in voltage are shown to be strongly dependent on the doping, width and carrier lifetime of the buffer layer
  • Keywords
    carrier lifetime; current density; insulated gate bipolar transistors; power transistors; solid-state rectifiers; buffered high power rectifiers; carrier lifetime; current density; current snap-back phenomenon; forward I-V characteristics; punch-through IGBTs; Anodes; Buffer layers; Charge carrier lifetime; Current density; Doping; Equations; Insulated gate bipolar transistors; Rectifiers; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803531
  • Filename
    803531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299706