Disparate tendency of stress evolution of thin and thick electroplated Cu films at room temperature

Author

Huang, Rui ; Robl, Werner ; Dehm, Gerhard ; Ceric, Hajdin ; Detzel, Thomas

Author_Institution

Kompetenzzentrum Automobil-und Industrieelektron. (KAI) GmbH, Villach, Austria

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

6

Abstract

The self-annealing effect of electroplated copper films was investigated by measuring the time dependence of the film stress for different film thicknesses between 1.5μm and 20μm. This recrystallization process results in significant microstructure change and a film-thickness-dependent stress evolution at room temperature. This behavior can be explained by the superposition of grain growth and grain size dependent yielding. Existing models have been used and improved to describe the mechanisms related to stress evolution.

Keywords

annealing; copper; electroplating; grain growth; grain size; metallic thin films; recrystallisation; thick films; Cu; copper films; electroplating; grain growth; grain size; microstructure; recrystallization process; self-annealing effect; stress evolution; temperature 293 K to 298 K; Annealing; Compressive stress; Copper; Materials science and technology; Microstructure; Temperature; Tensile stress; Thermal conductivity; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532222

Filename

5532222