Electrical properties and thermal stability of Ta/TaN/SiCN tri-layer barrier

Author

Yang, L.Y. ; Zhang, D.H. ; Deng, F.X. ; Li, C.Y.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

3

Abstract

We report the effect of a Ta/TaN/SiCN tri-layer barrier on the electrical properties and thermal stability of single damascene (SD) lines for Cu-ultra low k (2.3) integration. It was found that by incorporating a thin SiCN layer between the Ta/TaN barrier and ultra low k material, the leakage current can be significantly reduced and the breakdown voltage can be enhanced. A thermal treatment at 200°C for 40 hours can further improve the leakage current but with slight decrease in breakdown voltage.

Keywords

copper; electric breakdown; electric properties; integrated circuit interconnections; leakage currents; low-k dielectric thin films; silicon compounds; tantalum; tantalum compounds; thermal stability; wide band gap semiconductors; Cu-ultra low k integration; Ta-TaN-SiCN; breakdown voltage; electrical properties; leakage current; single damascene lines; temperature 200 degC; thermal stability; thermal treatment; time 40 hour; ultralow-k material; Copper; Delay; Electrical resistance measurement; Etching; Integrated circuit interconnections; Integrated circuit measurements; Leakage current; Silicon carbide; Thermal engineering; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532229

Filename

5532229