Reliability and breakdown characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer

Author

Das, T. ; Mahata, C. ; Dalapati, G.K. ; Chi, D. ; Sutradhar, G. ; Bose, P.K. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

4

Abstract

The electrical characteristics and reliability of HfO₂-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO₂. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide according to different thicknesses of HfO₂ were studied. It is found that an optimum Si IPL and a thin HfO₂ layer are essential to improve reliability characteristics of GaAs MOS capacitors which will enable gate oxide scaling down in GaAs system.

Keywords

III-V semiconductors; MOS capacitors; electric breakdown; elemental semiconductors; gallium arsenide; hafnium compounds; passivation; semiconductor device reliability; silicon; GaAs; HfO₂; Si; breakdown voltages; electric breakdown characteristics; flat band instability; gate oxide scaling; metal-oxide-semiconductor capacitor reliability; p-GaAs MOS capacitors; thin Si interface layer; thin silicon interfacial passivation layer; Capacitance-voltage characteristics; Dielectrics; Electric breakdown; Gallium arsenide; Hafnium oxide; III-V semiconductor materials; MOS capacitors; Passivation; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532235

Filename

5532235