Physical failure analysis cases by Electron Beam Absorbed Current & Electron Beam Induced Current detection on nano-probing SEM system

As the device feature size smaller and circuit complexity increase rapidly, failure analysis techniques to isolate defects will become more difficult and challenging. In this work, The new technique which combine EBAC/EBIC and nano-probing in a SEM system is presented. We study the new technique for failure site location and report two FA cases. One is 70 nm gate oxide thinner by AEI model and another is 65 nm device damaged by two probes VDIC model. We conclude that this technology provides us an effective alternative solution for semiconductor failure analysis.