DocumentCode
3301507
Title
A fast, scaleable FET model that accounts for propagation effects
Author
Lardizabal, S.M. ; Leoni, R.E., III ; Mallavarpu, R. ; Teeter, D. ; Snow, M.
Author_Institution
Adv. Device Center, Raytheon RF Components, Andover, MA, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
135
Lastpage
138
Abstract
This work developed a distributed PHEMT model for small signal S-parameter simulation. Distributed effects due to feed metalization were compared for a wide range of measured PHEMT geometries. Agreement between measured and modeled results was achieved for a large 40 x 60 /spl mu/m PHEMT, which makes the model attractive for large-signal model development.
Keywords
S-parameters; high electron mobility transistors; microwave field effect transistors; semiconductor device models; PHEMT geometries; distributed PHEMT model; distributed effects; fast scaleable FET model; feed metalization; large-signal model development; linear FET model; propagation effects; pseudomorphic HEMT; small-signal S-parameter simulation; Computational modeling; Displays; FETs; Feeds; Fingers; Geometry; Inductance; Radio frequency; Snow; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803744
Filename
803744
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