DocumentCode
3302319
Title
Optical interconnects to silicon CMOS
Author
Miller, D.A.B.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
35
Lastpage
38
Abstract
There are even greater problems for off-chip interconnects than on-chip ones. It is possible to break long on-chip interconnects up using on-chip repeater amplifiers, but that approach is very inconvenient off of the chip. Consequently, off-chip interconnects are a particularly attractive first implementation of optical interconnects to silicon chips. Optical interconnects are interesting for many reasons other than this scaling argument. They are immune to electromagnetic interference and crosstalk, they provide voltage isolation, they can have very low loss, and. they allow use of free-space optics, imaging many light beams from one chip to another. Historically a great impediment to integrating optical interconnects with CMOS was the absence of suitable optical output devices. Fortunately there are now two devices that may be able to fill this role - quantum-well modulator diodes, and vertical cavity surface emitting lasers (VCSELs).
Keywords
CMOS integrated circuits; crosstalk; optical interconnections; optical losses; packaging; quantum well lasers; surface emitting lasers; CMOS; crosstalk; electromagnetic interference immunity; free-space optics; loss; off-chip interconnects; optical interconnects; optical output devices; quantum-well modulator diodes; scaling; vertical cavity surface emitting lasers; voltage isolation; Electromagnetic interference; Optical amplifiers; Optical crosstalk; Optical devices; Optical interconnections; Optical modulation; Repeaters; Silicon; Stimulated emission; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937861
Filename
937861
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