Extension of safe-operating-area by optimizing body-current in submicron LDMOS transistors

Author

Lee, S.K. ; Choi, Y.C. ; Kim, J.H. ; Kim, C.J. ; Kang, H.S. ; Song, C.S.

Author_Institution

New Technol. Dev. Team, Fairchild Korea Semicond. Co, Kyonggi, South Korea

fYear

2001

fDate

25-27 June 2001

Firstpage

67

Lastpage

68

Abstract

We present the extension of Hot-Electron-Limited SOA and Electrical SOA by optimising the two peaks of body current in 20 V LDMOS Transistors. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively.

Keywords

MOSFET; hot carriers; impact ionisation; semiconductor device reliability; 20 V; body current; electrical SOA; hot carrier injection; hot-electron-limited SOA; impact ionization; safe operating area; snap-back phenomenon; submicron LDMOS transistor; Analytical models; Degradation; Design optimization; Doping; Hot carrier injection; Impact ionization; Kirk field collapse effect; Process design; Semiconductor optical amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937875

Filename

937875