DocumentCode
3302674
Title
Two novel modeling methodologies for IGBT transistor
Author
Charfi, F. ; Messaoud, M.B. ; Francois, B. ; Al-Haddad, K. ; Sellami, F.
Volume
1
fYear
2002
fDate
5-8 Nov. 2002
Firstpage
550
Abstract
To overcome the limitations of the conventional Matlab IGBT model, two model libraries for the power device (IGBT) aimed for the simulation of the power circuit tools have been proposed. To that end, we adapt the Stateflow to create the first model that consists of both control and operative parts. The Matlab Simulink environment is used to build the second model. The paper discusses the modeling methodology and describes simulation results obtained for different operation zone as well as advantages and drawbacks of the applied techniques.
Keywords
digital simulation; electronic engineering computing; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT transistor; Matlab IGBT model; Matlab Simulink environment; Stateflow; modeling methodologies; operation zone; power circuit tools; power device; Analytical models; Automotive engineering; Circuit simulation; Computational modeling; Discrete event simulation; Insulated gate bipolar transistors; Libraries; Mathematical model; Signal synthesis; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]
Print_ISBN
0-7803-7474-6
Type
conf
DOI
10.1109/IECON.2002.1187567
Filename
1187567
Link To Document