A 3-D BPSG flow simulation with temperature and impurity concentration dependent viscosity model

Author

Umimoto, H. ; Odanaka, S. ; Imai, S.

Author_Institution

Matsushita Electric Industrial Co. Ltd., Osaka, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

709

Lastpage

712

Abstract

A BPSG flow simulation with a newly developed viscosity model is described. The viscosity model allows a 3-D BPSG flow simulation in a wide range of flow temperature and impurity concentration in the BPSG. STM observation and 3-D BPSG flow simulation using this viscosity model reveal a significant difference in the flow behavior at 850 degrees C and at 900 degrees C. The temperature dependence of the 3-D BPSG flow behavior is clarified. It is found that the 3-D BPSG flow behavior is characterized by universal curves of the surface height using the viscosity model.<>

Keywords

borosilicate glasses; flow simulation; laminar flow; phosphosilicate glasses; semiconductor process modelling; 3-D BPSG flow simulation; B2O3-P2O5-SiO2; BPSG; STM observation; flow behavior; glass; impurity concentration; surface height; temperature; temperature dependence; universal curves; viscosity model; viscous flow; Annealing; Fluorescence; Planarization; Semiconductor device modeling; Semiconductor impurities; Surface topography; Temperature dependence; Temperature distribution; Viscosity; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235324

Filename

235324