A semiconductor GMR device [InAlAs-InAs]

Author

Yoh, K. ; Doi, T. ; Katano, Y. ; Abe, S. ; Ohno, H. ; Sueoka, K. ; Mukasa, K.

fYear

2001

fDate

25-27 June 2001

Firstpage

135

Lastpage

136

Abstract

Reports on a narrow-gap semiconductor interband-tunneling device whose magnetoresistance varies more than five orders of magnitude at 2K. The operational principle of the novel GMR device is based upon the magnetic field modulation of the tunnel barrier thickness thereby changing the tunnel resistance of the new version of "Esaki diode" characteristics. The depletion layer thickness, i.e., tunnel barrier thickness, is determined by the difference between the bottom of the Landau level and the Fermi level of the collector (p-InAs).

Keywords

Fermi level; Landau levels; aluminium compounds; giant magnetoresistance; indium compounds; magnetic semiconductors; magnetoresistive devices; narrow band gap semiconductors; tunnel diodes; 2 K; Esaki diode characteristics; Fermi level; InAlAs-InAs; Landau level; depletion layer thickness; magnetic field modulation; magnetoresistance; narrow-gap semiconductor interband-tunneling device; semiconductor GMR device; tunnel barrier thickness; tunnel resistance; Electrodes; Giant magnetoresistance; Indium compounds; Information technology; Magnetic fields; Semiconductor diodes; Substrates; Surface resistance; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937903

Filename

937903