Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD

Author

Motoda, T. ; Kadoiwa, K. ; Kimura, T. ; Nishimura, T. ; Uesugi, F. ; Kamizato, T. ; Arimoto, S. ; Tsugami, M. ; Mizuguchi, K.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

623

Lastpage

626

Abstract

The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over 70 degrees C is improved from 52 K to 69 K. This improvement is due to the suppression of carrier overflow by the MQB structure. This is a kind of electron wave interference device working at room temperature.<>

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 680 nm; 70 C; 70 to 56 mA; AlGaInP; MQB structure; carrier overflow suppression; characteristic temperature; electron wave interference device; laser characteristics; metal-organic chemical vapor deposition; multiquantum barrier; room temperature; semiconductors; threshold current; visible laser; Controllability; Diode lasers; Electrons; Interference; Light scattering; MOCVD; Masers; Optical scattering; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235393

Filename

235393