p/sup +/ polysilicon gate P-MOSFETs using BCl implantation

Author

Oikawa, K. ; Ando, S. ; Ando, N. ; Horie, H. ; Toda, Y. ; Tanaka, T. ; Hijiya, S.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

79

Lastpage

82

Abstract

Suppressing boron penetration through the gate oxide is necessary to give reliable p/sup +/ polysilicon gate P-MOSFETs which are expected to ease the short channel effect. Fluorine was automatically introduced in the gate oxide by BF/sub 2/ implantation and enhanced B diffusion. It is clearly demonstrated that chlorine does not enhance B diffusion. BCl implantation when fabricating p/sup +/ polysilicon gates makes it possible to fabricate quarter-micron gate length P-MOSFETs with pure oxide 4.5 nm thick.<>

Keywords

boron compounds; diffusion in solids; elemental semiconductors; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 0.25 micron; 45 nm; B diffusion; B penetration suppressions; BCl implantation; BF/sub 2/ implantation; P-MOSFETs; PMOS devices; SiO/sub 2/:BF/sub 2/-Si:BCl; p/sup +/ polysilicon gate; quarter-micron gate length; short channel effect; Annealing; Boron; Capacitance-voltage characteristics; Channel bank filters; Electrodes; Fabrication; Laboratories; MOS capacitors; MOSFET circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235419

Filename

235419