DocumentCode
3305002
Title
A simplified noise modeling of mm-wave FETs
Author
Moradi, Gholamreza ; Abdipour, Abdoluli
Author_Institution
Electron. Engineeing Dept., Civil Aviation Technol. Coll., Tehran, Iran
fYear
2002
fDate
17-19 Aug. 2002
Firstpage
312
Lastpage
314
Abstract
A simple procedure for finding the noise parameters of MESFETs and HEMTs is discussed. The influence of gate width on the equivalent noise temperature of HEMTs is studied. This is the basis of width scaling and is applicable in high power FETs. Also the influence of drain current on the noise performance of FETs is discussed. This matter is useful in accurate noise modeling of mm-wave ICs.
Keywords
Schottky gate field effect transistors; high electron mobility transistors; millimetre wave field effect transistors; power field effect transistors; semiconductor device models; semiconductor device noise; HEMT; MESFET; MM-wave FET; bias dependence; drain current; equivalent noise temperature; gate width scaling; noise model; power FET; Airports; Circuit noise; Educational institutions; HEMTs; MODFETs; Microwave FETs; Microwave technology; Noise figure; Temperature; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN
0-7803-7486-X
Type
conf
DOI
10.1109/ICMMT.2002.1187699
Filename
1187699
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