Properties of iron disilicide doped with Ru, Rh and Pd

Author

Fedorov, M.I. ; Khazan, M.A. ; Kaliazin, A.E. ; Zaitsev, V.K. ; Kartenko, N.F. ; Engelychev, A.E.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

26-29 March 1996

Firstpage

75

Lastpage

78

Abstract

This paper shows the results of a study of electrical resistivity and thermopower of semiconductor iron disilicide /spl beta/-FeSi/sub 2/ doped with Ru, Rh and Pd in the temperature range 300-1000 K. Polycrystalline samples for measurement were prepared by the vacuum-casting method. The limits of each dopant solubility in iron disilicide were estimated by X-ray diffraction measurements. It is shown that if non-band conductivity mechanism takes place in pure iron disilicide, the addition of the heavy metals results in change of conductivity mechanism. The results obtained are discussed from the point of optical phonon drag effect.

Keywords

X-ray diffraction; electrical conductivity; electrical resistivity; iron compounds; palladium; phonon drag; rhodium; ruthenium; semiconductor doping; semiconductor growth; semiconductor materials; thermoelectric power; /spl beta/-FeSi/sub 2/; 300 to 1000 K; FeSi/sub 2/:Pd; FeSi/sub 2/:Rh; FeSi/sub 2/:Ru; X-ray diffraction; dopant solubility; optical phonon drag effect; vacuum-casting method; Aluminum; Atom optics; Atomic measurements; Cobalt; Iron; Manganese; Optical scattering; Phonons; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1996., Fifteenth International Conference on

Conference_Location

Pasadena, CA, USA

Print_ISBN

0-7803-3221-0

Type

conf

DOI

10.1109/ICT.1996.553260

Filename

553260