Low and High Frequency Characterization of Metal Finger Capacitors for RFICs

Author

Subramaniam, Kalavathi ; Kordesch, Albert Victor ; Esa, Mazlina

Author_Institution

Univ. of Technol., Johor

fYear

2007

fDate

July 30 2007-Aug. 2 2007

Firstpage

567

Lastpage

570

Abstract

This paper proposes a new method for verifying the design and characterization of radio frequency metal finger capacitors at low and high frequencies. Scalable models for metal finger capacitors for up to 20 GHz are produced using a simple and reliable modeling method. This work includes verification of the produced design and model using LC band pass filters. The metal finger capacitors and filters have been fabricated in Silterra´s industry standard 180 nm 6 layer metal RF CMOS process.

Keywords

CMOS integrated circuits; Q-factor; band-pass filters; capacitors; integrated circuit design; radiofrequency integrated circuits; LC band pass filters; RF CMOS process; RFIC; frequency 20 GHz; metal finger capacitors; quality factor; radiofrequency integrated circuits; CMOS process; Capacitance measurement; Fingers; MIM capacitors; Metal-insulator structures; Parasitic capacitance; Q factor; Radio frequency; Radiofrequency integrated circuits; Temperature dependence; capacitance; metal finger capacitor; quality factor; self-resonance; temperature coefficient; voltage coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems and Electronics, 2007. ISSSE '07. International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

1-4244-1448-2

Electronic_ISBN

1-4244-1449-0

Type

conf

DOI

10.1109/ISSSE.2007.4294539

Filename

4294539