Accurate diode forward and reverse recovery model using asymptotic waveform evaluation techniques

Author

Beyene, Wendemagegnehu T. ; Schutt-Ainé, José E.

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

1

fYear

1996

fDate

12-15 May 1996

Firstpage

625

Abstract

An accurate simulation of diode forward and reverse recovery phenomena using AWE is presented. Moment-matching technique is applied directly to the drift-diffusion equation to construct a reduced-order model that describes the dynamic process occurring in a p-n junction. The model provides an increasingly accurate approximation to the characteristics of the device under all operating conditions. It simulates accurately the diode transient behavior and high frequency characteristics in power electronic simulation. The p-n diode recovery phenomenon is simulated, and the improved accuracy is verified by comparisons with SPICE simulations

Keywords

method of moments; semiconductor device models; semiconductor diodes; transient analysis; AWE techniques; asymptotic waveform evaluation techniques; diode forward recovery model; diode reverse recovery model; diode transient behavior; drift-diffusion equation; dynamic process; high frequency characteristics; moment-matching technique; p-n junction; power electronic simulation; reduced-order model; Analytical models; Circuit simulation; Computational modeling; Diodes; Frequency; Partial differential equations; Power dissipation; Power electronics; Reduced order systems; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-3073-0

Type

conf

DOI

10.1109/ISCAS.1996.540025

Filename

540025