• DocumentCode
    330750
  • Title

    Etch Properties Of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)

  • Author

    Lee, W.J. ; Kim, H.S. ; Yeom, G.Y. ; Lee, J.W. ; Kim, T.I.

  • Author_Institution
    Sung Kyun Kwan University
  • fYear
    1998
  • fDate
    13-16 July 1998
  • Firstpage
    293
  • Lastpage
    295
  • Keywords
    Argon; Chemicals; Dry etching; Gallium nitride; Human computer interaction; III-V semiconductor materials; Ion beams; Plasma temperature; Sputter etching; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1998 International
  • Conference_Location
    Kyoungju, South Korea
  • Print_ISBN
    4-930813-83-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1998.730088
  • Filename
    730088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330750