High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

Author

Lin, H.-H. ; Huang, C.-H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1992

fDate

21-24 April 1992

Firstpage

381

Lastpage

384

Abstract

The growth, fabrication, and characteristics of InAlAs/InGaAs heterojunction bipolar transistors (HBTs) are demonstrated. The effect of lattice-mismatch on the device characteristics is first studied. It is found that the tolerance of lattice mismatch is 4*10/sup -3/. The abnormal non-1kT collector current and non-2kT base current due to the bias-dependent heterojunction spike are also discussed. The I-V characteristics of abrupt and graded HBTs are compared. It is found that the abrupt HBT has smaller output resistance and breakdown voltage. These results are due to the hot electron launching from the potential spike of the abrupt junction. However, the abrupt HBT shows higher current gain, which is as high as 10000.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; I-V characteristics; InAlAs-InGaAs; base current; breakdown voltage; collector current; current gain; growth; heterojunction bipolar transistors; hot electron launching; lattice-mismatch; molecular beam epitaxy; output resistance; semiconductors; Chaotic communication; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235671

Filename

235671