F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT´s using novel self-aligned offset-gate technology

Author

Kwon, Y. ; Brock, T. ; Ng, G.I. ; Pavlidis, D. ; Munns, G.O. ; Sherwin, M.E. ; Haddad, G.I.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

360

Lastpage

363

Abstract

Maximum frequency of oscillation (f/sub max/) to cutoff frequency (f/sub T/) ratios up to 2.7 and good microwave characteristics have been achieved by applying an offset self-aligned gate technology to InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by CBE (chemical beam epitaxy). The microwave G/sub m//G/sub ds/ (output conductance) ratio for the devices was 23.5 using L/sub gd/ (gate to drain length)=0.4 mu m while the corresponding f/sub max/ was 251 GHz. The approach described combines the advantages of self-aligned and offset gate technologies.<>

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; 251 GHz; CBE; HEMTs; InAlAs-InGaAs; cutoff frequency; drain length; microwave characteristics; offset self-aligned gate technology; output conductance; semiconductors; Chemical technology; Cutoff frequency; Epitaxial growth; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Microwave devices; Microwave technology; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235677

Filename

235677